机译:VHF-PECVD法沉积的衬底温度对微晶硅膜生长特性的影响
Key Lab of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China;
Key Lab of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China;
Key Lab of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China;
Key Lab of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China;
Key Lab of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China;
hydrogenated microcrystalline silicon film; plasma enhanced chemical vapor deposition; simulation; substrate temperature;
机译:在低衬底温度下通过VHF-PECVD沉积的n型氢化纳米晶立方碳化硅膜的性能
机译:VHF-PECVD技术沉积的微晶硅膜的结构性能研究
机译:VHF-PECVD法沉积微晶硅薄膜的光稳定性
机译:基质温度对VHF-PECVD制备的无定形硅的过渡材料性能的影响
机译:近场光电流研究了硅基板上弛豫的硅锗薄膜中温度和极化相关性。
机译:磁控溅射沉积非晶碳膜的基体温度相关的微观结构和电子诱导的二次电子发射特性
机译:掺杂在低衬底温度下通过热线化学气相沉积法沉积的非晶硅和微晶硅膜
机译:沉积在硅衬底上的钛镍膜的结构和电学特性