Fabrication and Performance of Ino.53Gao.47As/AlAs Resonant Tunneling Diodes Overgrown on GaAs/AlGaAs Heterojunction Bipolar Transistors

摘要

Resonant tunneling diodes (RTDs) have been fabricated in the pseudomorphic In_(0.53)Ga_(0.47)As/AlAs material system on GaAs substrates. The RTDs have peak-to-valley current ratios (PVCRs) of approximately 9 and peak voltages of approximately 1 V at room temperature. This PVCR is 50% greater than any reported RTD using the lattice-matched GaAs/AlGaAs or GaAs/AlAs material systems. When compared to an identical RTD structure grown lattice-matched on an TnP substrate, these RTDs exhibit only a 20% reduction in PVCR with similar peak current and voltage. The RTD layers were overgrown on GaAs/AlGaAs heterojunction bipolar transistor (HBT) layers. The HBTs fabricated showed only a small degradation in their current-voltage characteristics