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Tutorial T5: The World beyond DRC: Design for Manufacturing (DFM) - Impact on Yield Reliability for Advanced Technology Nodes and Their Elucidations

机译:教程T5:超越DRC的世界:制造设计(DFM) - 对先进技术节点及其阐释的影响 - 对产量和可靠性的影响及其阐释

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Summary form only given, as follows. The complete presentation was not made available for publication as part of the conference proceedings. As we pace towards advanced technologies there is an assorted increase in design intricacies and accurate layout requirements. To meet the demanding specifications without compromising the time to market, designers look for precise first-pass silicon with first-class yield. The traditional Design Rule Checks (DRCs) cannot capture all the layout related issues that degrade the circuit yield and reliability. The rule-based DRCs considered as the mainstay of the layout verification have been augmented by latest DFM techniques in the last few years. In the first part of our tutorial, we will present various yield limiting layout issues arising from lack of DFM uses, such as how DFM issues lead to yield and reliability impacts on advance technology nodes like 28nm and below. This forces industry to think beyond DRC and mandate DFM for better yield and reliability. We will also discuss different degrees of DFM and its scoring used in industry. In the second part we will discuss Litho Process Checking (LPC): what are the challenging layout limiting configurations, how to detectclassify and fix them. We will cover cutting-edge approaches from EDA tools and foundries ranging from full process simulation based hotspots detection kits, to fast pattern matching based kits. We will discuss our analysis of these techniques in terms of finding hotspots, efforts to implement & use, and improvement in speed of execution as compared to traditional rule or simulation-based checks. Next we will discuss Chemical Mechanical Polishing (CMP) techniques and their elucidations. Further we will talk about Critical Area Analysis (CAA) and other yield enhancement approaches. In the concluding part we will discuss opportunities of different DFM design flows and collateral to be used in design process for better yield and reliability.
机译:摘要只给出,如下所述。完整的陈述未作为会议诉讼程序的一部分提供出版物。随着我们走向高级技术的步伐,设计复杂的各种增加和准确的布局要求。为了满足苛刻的规格而不妥协上市的时间,设计师寻找具有一流的产量的精确的首页硅。传统的设计规则检查(DRC)无法捕获所有削弱电路产量和可靠性的布局相关问题。作为布局验证的主要基于规则的DRC已经通过过去几年的最新DFM技术来增强。在我们教程的第一部分中,我们将展示缺乏DFM使用产生的各种产量限制性的布局问题,例如DFM问题如何导致高产和可靠性对预先技术节点的影响,如28nm及以下。这支迫使行业思考除DRC之外,授权DFM以获得更好的产量和可靠性。我们还将讨论不同程度的DFM及其在行业中的得分。在第二部分中,我们将讨论Litho进程检查(LPC):有什么质疑的布局限制配置,如何检测分类和修复它们。我们将覆盖从EDA工具和铸造的尖端方法,从完整的过程模拟的热点检测套件,以快速模式匹配的基于套件。我们将在寻找热点,实现和使用的努力方面讨论对这些技术的分析,以及与传统规则或基于模拟的检查相比,执行速度的速度提高。接下来我们将讨论化学机械抛光(CMP)技术及其阐明。此外,我们将讨论关键区域分析(CAA)和其他产量增强方法。在结束部分中,我们将讨论不同DFM设计流量和抵押品的机会,以便在设计过程中用于更好的产量和可靠性。

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