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XPS study of SiN_x thin film formation on Si(100) by reaction with 100-1000 eV N_2~+ ion beams

机译:用100-1000eV N_2〜+离子束反应研究Si(100)对Si(100)的SIN_X薄膜形成的XPS研究

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Nitridation processes of a Si(100) surface under exposure to 100-1000eV N_2~+ ion beams have been studied in situ in a UHV apparatus, using X-ray photoelectron spectroscopy. The nitride films formed on the Si surface with low energy beams (100-200eV) had near-stoichiometric composition of Si_3N_4. With beams of energy higher than 300eV a non-stoichiometric compound SiNx (x < 1.3) was formed with many defects.
机译:使用X射线光电子光谱,在UHV装置中原位研究了暴露于100-1000EV N_2〜+离子束下的Si(100)表面的氮化过程。在具有低能量梁(100-200EV)上的Si表面上形成的氮化物膜具有近的Si_3N_4的近代的组成。具有高于300eV的能量光束,形成具有许多缺陷的非化学计量化合物SINX(X 1.3)。

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