Completely planarized W plugs using MnO₂ CMP

机译：使用MnO _{2 CMP的完全平面化W塞}

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In tungsten (W) polishing, MnO₂ has been used as anabrasive to form plugs without etching holes in seams during CMP. Wefound that MnO₂ polishes 1.5 times faster than the standardAl₂O₃ abrasive, and can be completely removedduring the cleaning process

机译：在钨（W）抛光中，MnO _{2 已被用作
在CMP期间没有磨蚀形成接缝而没有在接缝中蚀刻孔的现象。我们
发现MnO _{2 的抛光速度是标准抛光速度的1.5倍
Al _{2 O _{3 磨料，可以完全去除
在清洁过程中}}}}

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《Electron Devices Meeting, 1995., International》||p.465-468|共4页
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Kishii S.; Suzuki R.; Ohishi A.; Arimoto Y.;
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2. A CNN-Based CMP Planarization Model Considering LDE Effect [J] . Bao Han, Chen Lan Components, Packaging and Manufacturing Technology, IEEE Transactions on . 2020,第4期

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3. Integrated electrochemical analysis of polyvinyl pyrrolidone (PVP) as the inhibitor for copper chemical mechanical planarization (Cu-CMP) [J] . Yang Guang, Wang Haixu, Wang Ning, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2019,第期

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4. Completely planarized W plugs using MnO/sub 2/ CMP [C] . Kishii, S., Suzuki, Electron Devices Meeting, 1995., International . 1995

机译：使用MnO / sub 2 / CMP完全平面化的W塞
5. Physicochemical Modeling of Copper Chemical Mechanical Planarization (CMP) Considering Synergies in Removal Materials. [D] . Choi, Seungchoun. 2013

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6. Comparative study of mechanical properties of cast and forged Al-3Mg-MnO2 and Al-8Mg-MnO2 composites [O] . Vikas Narain, Subrata Ray 2020

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Completely planarized W plugs using MnO2 CMP

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Completely planarized W plugs using MnO₂ CMP