ULSI多层布线钨插塞CMP粗糙度的影响因素分析

摘要

随着超大规模集成电路向高集成、高可靠性及低成本的方向发展,对集成电路制作过程中的全局平坦化提出了更高的要求.ULSI多层布线CMP中粗糙度对器件的性能有明显影响,因此本文主要研究多层互连钨插塞材料CMP过程中的表面粗糙度影响因素及控制技术,分析了抛光过程中影响粗糙度的主要因素,确定了获得较低表面粗糙度的抛光液配比及抛光工艺参数.%With the developing of ULSI to high density ofintegration, high reliability and low cost,the global planarization during IC fabrication are raised higher request. During CMP process, roughness of ULSI multilevel metallization layer influences the device performances directly. In this study, the key factors and controlling technology of influencing tungsten plug surface roughness during CMP process were studied, and the slurry optimal and polishing process parameters of gaining low surface roughness was gotten.