Modelling charge to breakdown using hydrogen multivibrational excitation (thin SiO₂ and high-k dielectrics) MOS devices

摘要

Gate oxide breakdown in MOS devices is related to the generation of defects in the oxide bulk. Recently, the power-law dependence of charge to breakdown and time to breakdown have been proposed. In previous work, we demonstrated a current dependence of the defect generation probability of hydrogen release, and, based on this phenomenon, we have proposed a new quantitative hydrogen release model explaining all breakdown dependences with voltage for all stress polarizations for PMOS and NMOS devices. In this work, we identify two interface state generation modes. We demonstrate that one of them is the MVHR (multi-vibrational hydrogen release) and we model it.