Millimeter wave monolithic IC's using direct ion implantation in toGaAs LEC substrates

摘要

Millimeter-wave monolithic ICs consisting of two-stage driveramplifiers and 4-bit phase shifters were fabricated by direct ionimplantation into 3-inch diameter GaAs LEC (liquid encapsulatedCzochralski) substrates. The monolithic two-stage amplifiers with0.3-micron gate length, ion-implanted GaAs MESFETs achieve a gain of 9.0to 10.1 dB from 40 to 48 GHz with a gain of 9.5 dB at 44 GHz. In thesame frequency range, the input return loss varies from 9.8 to 11.5 dBand output return loss from 6.6 to 9.0 dB. The 4-bit phase shiftersexhibit very accurate phase shift within 3° for 0 to 247.5 statesand 4-7° for 270 to 337.5 states at 44 GHz. The insertion loss is9.4 11.1 dB for all 16 states. The authors concentrate on the results ofmonolithic driver amplifiers and digital phase shifters atQ-band frequencies