Improvement of off-state breakdown voltage in power GaAs MESFETsbased on an accurate simulation scheme

摘要

A realistic simulation scheme for improving off-state breakdownvoltage (BV_gd) in power GaAs MESFETs has been developed. Inthis scheme, impact ionization, tunneling, and surface charge dynamicsare all considered. The simulation successfully describes experimentallyobserved breakdown behavior. Using the simulation results, we havedeveloped an FET with a neutralized p-buffer layer that improvesBV_gd by at least 10 V higher than that of conventional FETs