BREAKDOWN VOLTAGE EVALUATION EQUIPMENT FOR SEMICONDUCTOR DEVICE, AND METHOD OF BREAKDOWN VOLTAGE SIMULATION

摘要

PROBLEM TO BE SOLVED: To provide a breakdown voltage evaluation equipment for semiconductor device and a method for breakdown voltage simulation which can make accurate estimation of the breakdown voltage of a silicon carbide power device, by performing device simulation adopting the anisotropy of breakdown strength, based on the physical considerations.;SOLUTION: The breakdown voltage evaluation equipment for semiconductor device comprises an initial value setting section which defines grid points in a designed semiconductor device and sets up designing information for each grid point; a bias-setting section for setting up the bias conditions to be applied to the semiconductor device; and a simultaneous equation calculator which solves the simultaneous equations of Poisson's equation and the continuity equation for current by using the physical property values having the anisotropy of the semiconductor device. The simultaneous equation calculator consists of a section for calculating the potential profile and the concentration profile of carriers comprising electrons and holes; a calculator of calculating the mobility vector of the carriers, based on the vector of an electric field calculated from the potential profile; and a calculator for calculating the velocity vector, which is the product of the mobility vector and the field vector, and then calculating the impact ionization factor for the carriers, based on the scalar product of the velocity vector and the field vector.;COPYRIGHT: (C)2006,JPO&NCIPI