Degradation of AlGaAs/GaAs Power HFET's Under On-State and Off-State Breakdown Conditions

摘要

This work shows a detailed comparision of the degradation caused by off-state breakdown conditions in power AlGaAs/GaAs HFET's Stress experimetns carried out at gate-drain reverse currents up to 3.3mA/mm (for a total of more than 700h) show a remarkably larger degradation for the off-state stress, due to more pronounced electron heating at any fixed value of galue of gate reverse current. The degradation modes include V_T and R_D increase and 1_DSS and gm reduction.