Ultra thin (<20 Å) CVD Si₃N₄ gatedielectric for deep-sub-micron CMOS devices

摘要

In this paper, we report the first sub-micron n- and p-MOSFETswith ultra thin (<20 Å) Si₃N₄ gatedielectric fabricated by in-situ rapid thermal CVD (RTCVD) process, andcompare their performance and reliability with control SiO₂devices of identical equivalent oxide thickness (T_eq). Bothn- and p-MOSFETs with CVD Si₃N₄ gate dielectricshow higher drain current and peak transconductance, enhanced immunityto hot carrier stress, and significant reduction of tunneling leakagecurrent