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Accurate Determination of Ultrathin Gate Oxide Thickness and Effective Polysilicon Doping of CMOS Devices

机译：精确测定CmOs器件的超薄栅氧化层厚度和有效多晶硅掺杂

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Ashawant Gupta; Peng Fang; Miryeong Song; Ming-ren Lin; Don Wollesen; Kai Chen; Chenming Hu;
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年度 2008
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1. Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices [J] . Gupta A., Peng Fang IEEE Electron Device Letters . 1997,第12期

机译：准确确定CMOS器件的超薄栅氧化层厚度和有效多晶硅掺杂
2. A Comparison of Floating-Body Potential in H-Gate Ultrathin Gate Oxide Partially Depleted SOI pMOS and nMOS Devices Based on 90-nm SOI CMOS Process [J] . Shiao-Shien Chen, Shiang Huang-Lu, Tien-Hao Tang IEEE Electron Device Letters . 2004,第4期

机译：基于90nm SOI CMOS工艺的H-Gate超薄栅极氧化物部分耗尽的SOI pMOS和nMOS器件中浮体电位的比较
3. Impact of Failure Criteria on the Reliability Prediction of CMOS Devices With Ultrathin Gate Oxides Based on Voltage Ramp Stress [J] . A. Kerber, T. Pompl, M. Rohner, IEEE Electron Device Letters . 2006,第7期

机译：失效准则对基于电压斜坡应力的超薄栅氧化物CMOS器件可靠性预测的影响
4. Drain and Gate Current LF Noise in Advanced CMOS devices with Ultrathin gate Oxides [C] . T. Contaret, K. Romanjek, G. Ghibaudo, International Conference on Noise and Fluctuations . 2005

机译：具有超薄栅极氧化物的高级CMOS器件中噪声的排水和栅极电流
5. Integration of ultrathin (1.6 -- 2.0 nm) RPECVD stacked oxide/oxynitride gate dielectrics into dual poly-Si gate submicron CMOSFETs. [D] . Yang, Hanyang. 1999

机译：将超薄（1.6-2.0 nm）RPECVD堆叠的氧化物/氮氧化物栅极电介质集成到双多晶硅栅极亚微米CMOSFET中。
6. Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices [O] . Yi Zhao 2012

机译：高k和更稳定的稀土氧化物作为先进CMOS器件的栅极电介质的设计
7. The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices [O] . Ahmad I., Omar A., Mikdad A. 2002

机译：掺杂方法对亚微米CMOS器件中多晶硅栅电极电性能和微观形貌的影响
8. Performance of Polysilicon Gate CMOS Devices in Space and SDI Environments [R] . Schwank, J. R., Sexton, F. W., Winokur, P. S., 1986

机译：多晶硅栅CmOs器件在空间和sDI环境中的性能

Accurate Determination of Ultrathin Gate Oxide Thickness and Effective Polysilicon Doping of CMOS Devices

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