0.1 μm level contact hole pattern formation with KrF lithographyby resolution enhancement lithography assisted by chemical shrink(RELACS)

摘要

We developed a hole shrink process named RELACS (ResolutionEnhancement Lithography Assisted by Chemical Shrink) that is a robustand low-cost method. This method makes use of crosslinking reactionbetween the materials coated on the resist pattern, and the acidexisting at the resist wall. By the RELACS, we could shrink KrF resisthole patterns to 0.1 μm level. The shrinkage of hole size isdependent on both baking temperature and initial hole size. This processhas been established for the fabrication of 0.20 μm devices