0.1 /spl mu/m level contact hole pattern formation with KrF lithography by resolution enhancement lithography assisted by chemical shrink (RELACS)

摘要

We developed a hole shrink process named RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink) that is a robust and low-cost method. This method makes use of crosslinking reaction between the materials coated on the resist pattern, and the acid existing at the resist wall. By the RELACS, we could shrink KrF resist hole patterns to 0.1 /spl mu/m level. The shrinkage of hole size is dependent on both baking temperature and initial hole size. This process has been established for the fabrication of 0.20 /spl mu/m devices.