A 0.05 μm-CMOS with ultra shallow source/drain junctionsfabricated by 5 keV ion implantation and rapid thermal annealing

摘要

A 0.05 μm-PMOSFET has been fabricated for the first time,together with a 0.05 μm-NMOSFET. For this process, ultra shallowsource/drain junctions were developed on the basis of 5 keV ionimplantation technology and rapid thermal annealing. The short channeleffect was suppressed and Gm max reaches 460 mS/mm for NMOS and 380mS/mm for PMOS. The delay time per stage of unloaded CMOS inverter is13.1 psec at the supply voltage of 1.5 V