Effect of Ramp Rates During Rapid Thermal Annealing of Ion Implanted Boron for Formation of Ultra-Shallow Junctions

摘要

Over the last couple of years, manufacturers of rapid thermal annealing (RTA) equipment have been aggressively developing lamp-based furnaces capable of achieving ramp-up rates of the order of hundreds of degrees per second. One of the driving forces for such a strategy was the experimental demonstration of 30 nm p-type junctions using a ≈400 deg C/s ramp-up rate during a spike-anneal Ultra-fast ramp rate capability was thus embraced as an essential requirement for the next generation of RTA equipment.