A comprehensive study of MOSFET electron mobility in both weak andstrong inversion regimes

摘要

The physical origins of both Coulomb scattering and surfaceroughness scattering were investigated experimentally. It wasdemonstrated that the screening effect of Coulomb scattering issignificantly different between interface charges and substrateimpurities. It was also observed for the first time that there is a weakE_eff dependence of μ_sr in MOSFETs with a longroughness correlation length comparable to the electron wavelength