A high-voltage, medium-power silicon planar epitaxial switching transistor

摘要

Since transistors have been used as drivers in ferrite core solid-state memories, the push for increased performance has been relentless. To compound the problem, the increased performance has always been required in all directions simultaneously, such as higher operating voltage, higher current capability, higher speed, and lower saturation drops. Along with the foregoing requirements, high reliability is also mandatory. This paper describes the development of a transistor with improved performance in all of the categories mentioned above. It is a double-diffused, epitaxial, silicon NPN planar structure employing a unique impurity gradient in the epitaxial layer and a unique ohmic contact geometry. The result is a transistor with a BVCBOCEOBE(SAT)is less than 1.5 v. and VCE(SAT)is less than 1.0 v.