Process‐Introduced Structural Defects and Junction Characteristics in N P N Silicon Epitaxial Planar Transistors

摘要

X‐ray diffraction miscroscopy has been used as a nondestructive technique in order to observe and monitor the effects of process treatments and the relation of structural defects to the variation of junction characteristics from the performance predicted. X‐ray topographs were recorded at the following processing stages of electrochemically and mechanically polished wafers: (1) before epitaxial growth, (2) after epitaxial growth, (3) after thermal passivation, (4) after boron diffusion, and (5) after phosphorus diffusion. Poor reverse junction characteristics have been correlated with the coincidence of dislocations and junction areas. Light surface markings due to polishing procedures may not adversely affect the junction characteristics, while scribe marks invariably cause shorted junctions.