首页> 美国政府科技报告 >PRODUCTION ENGINEERING MEASURE DA-36-039-SC-86727 SILICON PLANAR EPITAXIAL TRANSISTOR TYPE 2N2193 SILICON GROWN DIFFUSED TRANSISTOR TYPE 2N336

【24h】

PRODUCTION ENGINEERING MEASURE DA-36-039-SC-86727 SILICON PLANAR EPITAXIAL TRANSISTOR TYPE 2N2193 SILICON GROWN DIFFUSED TRANSISTOR TYPE 2N336

机译：生产工程测量Da-36-039-sC-86727硅平面外延晶体管型2N2193硅生长扩散型2N336

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

PassivationnHigh Temperature Main SealingnExperimentation and EvaluationnCharacteristic Distribution

著录项

作者

展开▼
作者单位

展开▼
年度 1963
页码 1-59
总页数 59
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词

相似文献

外文文献
中文文献
专利

1. Effect of threading dislocation density and dielectric layer on temperature-dependent electrical characteristics of high-hole-mobility metal semiconductor field effect transistors fabricated from wafer-scale epitaxially grown p-type germanium on silicon substrates [J] . Swapnadip Ghosh, Darin Leonhardt, Sang M. Han Journal of Applied Physics . 2014,第9期

机译：穿线位错密度和介电层对硅衬底上晶片尺寸外延生长的p型锗制成的高空穴迁移率金属半导体场效应晶体管的温度相关电特性的影响
2. Analyses on RF Performances of Silicon-Compatible InGaAs-Based Planar-Type and Fin-Type Junctionless Field-Effect Transistors [J] . Seo Jae Hwa, Yoon Young Jun, Cho Seongjae, Journal of nanoscience and nanotechnology . 2015,第10期

机译：硅兼容的基于InGaAs的平面型和鳍型无结结型场效应晶体管的射频性能分析
3. Fully tensile strained partial silicon-on-insulator n-type lateral-double-diffused metal-oxide-semiconductor field effect transistor using localized contact etching stop layers [J] . Xiangzhan Wang, Changgui Tan, Xi Zou, AIP Advances . 2017,第5期

机译：使用局部接触蚀刻停止层的完全拉伸应变的部分绝缘体上硅n型横向双扩散金属氧化物半导体场效应晶体管
4. Comparison of electrical characteristics of N-type silicon junctionless transistors with and without film profile engineering by TCAD simulation [C] . Tsai Jung-Ruey, Lin Horng-Chih, Chang Hsiu-Fu, IEEE Silicon Nanoelectronics Workshop . 2015

机译：通过TCAD模拟比较具有和不具有膜轮廓工程的N型硅无结晶体管的电特性
5. Band engineering in silicon/silicon(1-y)carbon(y) and silicon/silicon(1-x-y)germanium(x)carbon(y) heterostructures and application to PNP heterojunction bipolar transistors (Silicon carbide, Silicon germanium carbide). [D] . Singh, Dinkar V. 2001

机译：硅/硅（1-y）碳（y）和硅/硅（1-x-y）锗（x）碳（y）异质结构的能带工程及其在PNP异质结双极晶体管（碳化硅，碳化硅锗）中的应用。
6. Retraction: Integrating Epitaxial-Like Pb(ZrTi)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor [O] . Jae Hyo Park, Hyung Yoon Kim, Gil Su Jang, -1

机译：缩回：将类似外延的Pb（ZrTi）O3薄膜集成到硅中用于下一代铁电场效应晶体管
7. Fully tensile strained partial silicon-on-insulator n-type lateral-double-diffused metal-oxide-semiconductor field effect transistor using localized contact etching stop layers [O] . Xiangzhan Wang, Changgui Tan, Xi Zou, 2017

机译：完全拉伸的应变部分硅绝缘体n型采用局域化的横向双扩散金属氧化物半导体场效应晶体管接触蚀刻停止层
8. PRODUCTION ENGINEERING MEASURE DA-36-039-SC-86727 SILICON PLANAR EPITAXIAL TRANSISTOR TYPE 2N2193 [R] . 1963

机译：生产工程测量Da-36-039-sC-86727硅平面外延晶体管型号2N2193

PRODUCTION ENGINEERING MEASURE DA-36-039-SC-86727 SILICON PLANAR EPITAXIAL TRANSISTOR TYPE 2N2193 SILICON GROWN DIFFUSED TRANSISTOR TYPE 2N336

摘要

著录项

相似文献

相关主题

期刊订阅