100nm InAlAs/InGaAs double-gate HEMT using transferred substrate

摘要

100nm T-gates InP double-gate HEMTs (DG-HEMT) have been fabricated by use of transferred substrate technique. Theses devices are compared with standard single 100nm T-gate HEMT. The maximum extrinsic transconductance gm of DG-HEMT is two times higher than the HEMT one, and the extrinsic output conductance gd is significantly reduced with DG-HEMT. The combined high gm and low gd induced an extremely high intrinsic unloaded voltage gain gm/gd of 100. So, theses results allowed an improvement of the maximum oscillation frequency (f_max) of 30% compared with standard single 100nm T-gate HEMT. These results are attributed to reduction of short channel effects, related to higher charge control efficiency and suppression of buffer effect.