1.2-um InAs/GaAs high-density quantum dot laser

摘要

Here we report the growth method of InGa/GaAs quantum dot (QD) with differnet QD density bymanipulating InAs deposition rate from 0.065 ML/s to 0.1 ML/s. Chose the highest density QD as theactive region and grow multilayer InAs/GaAs QD with high uniform. Then fabricate a narrowridge waveguide laser by semiconductor process. The rigid waveguide is 1.8 um high and 5 um wide, andthe cavity length is 1mm. The output power of this narrow-rigid laser is 164 mW and central wavelengthis 1204.6 nm when the injection current is 0.5 A at 15℃. The threshold current is as low as 35 mA, andthreshold current density is 1939 A/ğ‘ğ‘š~2.