Off-state stress-induced reduction of off-state current inpolycrystalline silicon thin film transistors

摘要

The off-state stress response of n and p channel poly-Si TFTs wasstudied as a function of the poly-Si crystallization and defectpassivation approaches using I-V and C-V measurements. Both n- andp-TFTs were found to exhibit lower I_off after far-off statestress. TFTs of all processing splits show off-current reduction afteroff-state stress. A metastable component to this I_offreduction was identified. We show that n-TFTs show I_offreduction due to shielding states creation, while p-TFTs show I_off reduction due to a reduction in generation