首页> 外国专利> METHOD AND SYSTEM FOR THE REDUCTION OF OFF-STATE CURRENT IN FIELD-EFFECT TRANSISTORS

METHOD AND SYSTEM FOR THE REDUCTION OF OFF-STATE CURRENT IN FIELD-EFFECT TRANSISTORS

机译:减小场效应晶体管中的断态电流的方法和系统

摘要

A method for reducing the field dependence of an off-state current flow condition in a field-effect transistor having a source electrode, a drain electrode and a gate electrode, includes the steps of: applying a far off-state bias between the drain electrode and the gate electrode to drive a conduction channel in the field-effect transistor into a far off-state; and applying a far off-state bias between the source electrode and the gate electrode to again drive the conduction channel into a far off-state; wherein both applying steps cause application of the far off-state bias for a sufficient time to reduce gate voltage dependency of off-state current flow in the conduction channel during a period when an off-state potential is applied to the gate electrode.
机译:一种用于在具有源电极,漏电极和栅电极的场效应晶体管中减小关态电流流动状态的场相关性的方法,包括以下步骤:在漏电极之间施加很远的关态偏压。栅电极将场效应晶体管中的导通沟道驱动到远截止状态。在源电极和栅电极之间施加远截止状态的偏压,以再次将导电沟道驱动到远截止状态。其中,两个施加步骤均导致在足够的时间内施加远截止状态偏压,以减小在向栅极电极施加截止状态电势期间在导电沟道中流动的截止状态电流的栅极电压依赖性。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号