Understanding of hard and soft breakdown phenomena in thin gateoxides through carrier transport properties after breakdown

摘要

The carrier separation technique is applied to gate oxides afterthe occurrence of soft and hard breakdown. The dominant carrier type inleakage current flow through gate oxides after breakdown is identifiedfor MOSFETs with different channel types and doping types of the poly Sigate electrode. The systematic approach through this combination ofcarrier separation measurement and MOSFETs with various doping types isshown to be quite effective in studying the conduction mechanism and thephysical picture of breakdown spots