首页>
外国专利>
SEMICONDUCTOR MEMORY CELL AND MEMORY ARRAY USING A BREAKDOWN PHENOMENA IN AN ULTRA-THIN DIELECTRIC
SEMICONDUCTOR MEMORY CELL AND MEMORY ARRAY USING A BREAKDOWN PHENOMENA IN AN ULTRA-THIN DIELECTRIC
展开▼
机译:在超薄介电中使用击穿现象的半导体记忆细胞和记忆阵列
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor memory cell (300) having a data storage element (115) constructed around an ultra-thin dielectric (312) is used to store information by stressing the ultra-thin dielectric (312) into breakdown (soft or hard breakdown) to set the leakage current level of the memory cell (300). The memory cell (300) is read by sensing the current drawn by the cell (300). A suitable ultra-thin dielectric (312) is high quality gate oxide of about 50 Å thickness or less.
展开▼