The integrated circuit industry growth will continue to rely onmicrolithography as a key enabler to drive chip productivity. Currentoptical lithography methods (i.e. 193 nm) have been projected to haveresolving power down to 130 nm CD generation nodes. Beyond thiscapability there is a strong consensus that a “Next GenerationLithography” (NGL) technology will be needed to continue along SIARoadmap timelines. Many NGL technologies are candidates for sub-130 nmCD manufacturing. Choosing the technology path with partial data andlimited resources by YE 1997 to meet 130 nm/2003 and 100 nm/2007generation nodes will require a consensus (international) decisionprocess methodology
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