首页> 外文会议>Electronics Manufacturing Technology Symposium, 1997., Twenty-First IEEE/CPMT International >Beyond refractive optical lithography next generation lithography“What's after 193 nm?”
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Beyond refractive optical lithography next generation lithography“What's after 193 nm?”

机译:超越折射光学光刻技术的下一代光刻技术“ 193 nm之后是什么?”

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The integrated circuit industry growth will continue to rely onmicrolithography as a key enabler to drive chip productivity. Currentoptical lithography methods (i.e. 193 nm) have been projected to haveresolving power down to 130 nm CD generation nodes. Beyond thiscapability there is a strong consensus that a “Next GenerationLithography” (NGL) technology will be needed to continue along SIARoadmap timelines. Many NGL technologies are candidates for sub-130 nmCD manufacturing. Choosing the technology path with partial data andlimited resources by YE 1997 to meet 130 nm/2003 and 100 nm/2007generation nodes will require a consensus (international) decisionprocess methodology
机译:集成电路行业的增长将继续依赖 微光刻作为推动芯片生产率的关键推动器。当前的 光学光刻方法(即193nm)已经预测到 将电源分解为130 nm CD生成节点。超出此 能力存在强烈的共识,即“下一代” 光刻“(NGL)技术将需要继续沿SIA 路线图时间表。许多NGL技术是Sub-130 NM的候选者 CD制造。选择具有部分数据的技术路径和 YE 1997资源有限,以满足130纳米/ 2003和100 NM / 2007 生成节点将需要共识(国际)决定 工艺方法论

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