首页> 外国专利> - 193- - METHODS OF FABRICATING MICROELECTRONIC STRUCTURES USING DUAL-LAYER LIGHT-SENSITIVE DEVELOPER-SOLUBLE BOTTOM ANTI-REFLECTIVE COATINGS FOR 193-NM LITHOGRAPHY

- 193- - METHODS OF FABRICATING MICROELECTRONIC STRUCTURES USING DUAL-LAYER LIGHT-SENSITIVE DEVELOPER-SOLUBLE BOTTOM ANTI-REFLECTIVE COATINGS FOR 193-NM LITHOGRAPHY

机译:-193--用于193-NM光刻的双层光敏显影性底部可溶反光涂层制造微电子结构的方法

摘要

The present invention provides a method of fabricating a microelectronic structure for reducing reflection from a substrate during exposure and a structure formed by such a method using a double layer, photosensitive wet-developable bottom anti-reflective coating stack. The present invention provides dye-fill and dye-adhering compositions for use in anti-reflective coatings. The anti-reflective coating is thermally crosslinkable and is photochemically deblockable. The bottom anti-reflective coating stack has progressive optical properties and is developed simultaneously with the photoresist. The above methods and structures are particularly suitable for high-NA lithography processes.
机译:本发明提供了一种制造微电子结构的方法,该微电子结构用于减少曝光期间来自基板的反射,以及通过使用双层,光敏可湿显影的底部抗反射涂层叠层的这种方法形成的结构。本发明提供了用于抗反射涂层的染料填充和染料粘附组合物。该抗反射涂层是可热交联的并且是光化学可解嵌段的。底部抗反射涂层叠层具有渐进的光学性能,并且与光刻胶同时显影。上述方法和结构特别适合于高NA光刻工艺。

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