Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs

摘要

Positive bias instability stress (PBI) and hot carrier injection stress (HCI) was done on ZnO thin-film transistors (TFTs) with 100°C Al2O3. The threshold voltage (VT), transconductance (gm), and subthreshold slope (SS) were monitored. HCI stress with two intermittent sense measurements where the first IDS-VGS is measured at the drain contact and the second is measured at the source contact to separate the contribution of the hot carrier and cold carrier injection on the VT shift. PBI stress was done to determine the viability of the carrier injection separation using only HCI.