Parasitics Optimization for GaN HEMTs in Conventional Housing-Type Power Modules

摘要

The magnetic flux-cancellation design is difficult to be implemented in the conventional housing-type power modules due to the single-layer current conducting path of the substrate. Also, the height of the module profile will introduce stray inductance between the gate driver board and power switches. This paper aims to remove the obstacles of applying GaN in conventional housing-type packaging and realizing efficient and reliable switching transition. The effects of the parasitics in the power stage are analyzed and experimentally verified. The layout rules are summarized accordingly. What's more, a novel power module housing design is also proposed in this paper.