Modeling of crosstalk effects in carbon nanotube based differential through-silicon via array

摘要

The equivalent circuit model of multiple differential through-silicon vias (D-TSVs) based on carbon nanotube (CNT) is presented in this paper. The model is validated against the full-wave electromagnetic simulator HFSS. By virtue of the circuit model, the crosstalk between CNT-based D-TSVs is evaluated and compared.