首页>
外国专利>
METHOD AND MODEL OF CARBON NANOTUBE BASED THROUGH SILICON VIAS (TSV) FOR RF APPLICATIONS
METHOD AND MODEL OF CARBON NANOTUBE BASED THROUGH SILICON VIAS (TSV) FOR RF APPLICATIONS
展开▼
机译:基于硅纳米管(TSV)的碳纳米管的射频方法和模型
展开▼
页面导航
摘要
著录项
相似文献
摘要
A carbon nanotube (CNT) through silicon via (TSV) for three-dimensional (3D) substrate interconnects is described. TSV technologies provide for high performance and high density 3D packages. The CNT-based TSVs provide for integration of analog, RF and mixed-signal integrated circuits. CNT-based TSV provides superior electrical characteristics as compared to conventional TVs filled with conductive metals.
展开▼