Modeling and Characterization of Differential Multibit Carbon-Nanotube Through-Silicon Vias

摘要

By the virtue of multibit through-silicon via (TSV), which consists of carbon-nanotube (CNT)-filled TSV with separate metal pads, design of compact differential multibit CNT TSVs (DMC-TSVs) is proposed and studied. For modeling such DMC-TSVs, an equivalent circuit model is introduced, in which the partial-element equivalent circuit (PEEC) method is adopted to extract the impedance. Moreover, the circuit model is simplified as an odd-mode half-circuit and is used to design passive resistor-inductor (RL) equalizer.