Circuit Modeling of Shielded Differential Carbon Nanotube Bundle Filled Through-Silicon Vias

摘要

In this paper, a modified shielded differential through-silicon vias (SD-TSVs) with the concept of multi-bit TSV is presented. The TSV is filled with vertically aligned carbon nanotube (VACNT) array, and two metal pads are deposited on the sides of the surface of that TSV to form differential signal transmission paths. The equivalent circuit model is established, meanwhile, the partial-element equivalent-circuit (PEEC) method is utilized to extract the frequency-dependent impedance of that SD-TSVs. By virtue of the equivalent circuit model, the electrical performance of the proposed SD-TSVs is investigated.