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Multiwavelength Raman characterization of silicon stress near through-silicon vias and its inline monitoring applications

机译：通过硅通孔通孔近硅应力的多波长拉曼特征及其在线监测应用

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Woo Sik Yoo; Jae Hyun Kim; Seung Min Han;
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年度 2014
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1. Clarification of Stress Field Measured by Multiwavelength Micro-Raman Spectroscopy in the Surrounding Silicon of Copper-Filled Through-Silicon Vias [J] . Chan Y.S., Zhang X. Components, Packaging and Manufacturing Technology, IEEE Transactions on . 2014,第6期

机译：澄清通过铜填充硅通孔周围硅中的多波长微拉曼光谱法测量的应力场
2. Study of Near-Surface Stresses in Silicon Around Through-Silicon Vias at Elevated Temperatures by Raman Spectroscopy and Simulations [J] . Zhu Ye, Zhang Jiye, Li Hong Yu, Device and Materials Reliability, IEEE Transactions on . 2015,第2期

机译：用拉曼光谱和模拟研究高温下硅通孔周围硅中的近表面应力
3. Micro-Raman spectroscopy and analysis of near-surface stresses in silicon around through-silicon vias for three-dimensional interconnects [J] . Ryu Suk-Kyu, Zhao Qiu, Hecker Michael, Journal of Applied Physics . 2012,第6期

机译：三维互连的硅通孔周围硅中的拉曼光谱和近表面应力分析
4. Clarification of stress field measured by multi-wavelength micro-raman spectroscopy in the surrounding silicon of copper-filled through-silicon vias (tsvs) [C] . Chan Y.Sing, Zhang Xiaowu IEEE Electronics Packaging Technology Conference . 2013

机译：澄清通过多波长微拉曼光谱法测量的铜填充硅通孔（tsvs）周围硅中的应力场
5. Applications of Raman spectroscopy for silicon stress characterization in integrated circuits. [D] . McDonough, Colin J. 2011

机译：拉曼光谱在集成电路中硅应力表征中的应用。
6. Tailoring femtosecond 1.5-μm Bessel beams for manufacturing high-aspect-ratio through-silicon vias [O] . Fei He, Junjie Yu, Yuanxin Tan, -1

机译：量身定制飞秒的1.5μm贝塞尔光束以制造高纵横比的硅通孔
7. Study of Near-Surface Stresses in Silicon Around Through-Silicon Vias at Elevated Temperatures by Raman Spectroscopy and Simulations [O] . Ye Zhu, Jiye Zhang, Hong Yu Li, 2015

机译：拉曼光谱和模拟升高温度下硅通孔硅近表面应力研究

Multiwavelength Raman characterization of silicon stress near through-silicon vias and its inline monitoring applications

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