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Electrical analysis of low distortion transmission design and stacking TSVs on silicon interposer

机译:低失真传输设计和堆栈TSV在硅插入器上的电气分析

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In this paper, the performance of GSG co-planar waveguide (CPW) type transmission line on silicon interposer and stacking memories by through-silicon-vias (TSVs) are analyzed. The high conductor loss of fine lines will cause the impedance varying with frequency and make the reflection loss minor. Furthermore the flat attenuation of such fine line will result in low distortion waveforms and have better jitter performance compared to conventional wire-bonded memory stacking and PCB routing design. Both frequency and time domain are discussed and analyzed.
机译:本文分析了GSG共平面波导(CPW)型传输线对硅插入器和硅通孔(TSV)堆叠存储器的性能的性能。细线的高导体损耗将导致阻抗随频率而变化,并使反射损耗较小。此外,这种细线的平坦衰减将导致低失真波形,与传统的引线存储器堆叠和PCB路由设计相比具有更好的抖动性能。讨论和分析频率和时域两个。

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