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Electrical analysis of low distortion transmission design and stacking TSVs on silicon interposer

机译:低失真传输设计和在硅中介层上堆叠TSV的电分析

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In this paper, the performance of GSG co-planar waveguide (CPW) type transmission line on silicon interposer and stacking memories by through-silicon-vias (TSVs) are analyzed. The high conductor loss of fine lines will cause the impedance varying with frequency and make the reflection loss minor. Furthermore the flat attenuation of such fine line will result in low distortion waveforms and have better jitter performance compared to conventional wire-bonded memory stacking and PCB routing design. Both frequency and time domain are discussed and analyzed.
机译:本文分析了GSG共面波导(CPW)型传输线在硅中介层上的性能以及通过硅通孔(TSV)的堆叠存储器的性能。细线的高导体损耗将导致阻抗随频率变化,并使反射损耗较小。此外,与传统的引线键合存储器堆叠和PCB布线设计相比,这种细线的平坦衰减将导致低失真波形并具有更好的抖动性能。对频域和时域都进行了讨论和分析。

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