Characterization and Comparison of Trench and Planar Silicon Carbide (SiC) MOSFET at Different Temperatures

摘要

In this paper, the static and dynamic characteristics of discrete 650 V and 1200 V trench TO 247 SiC MOSFET is evaluated and compared with a similar current rating 1200 V planar gate discrete TO 247 SiC MOSFET. The new trench MOSFET has promising application for vehicle charging and auxiliary power supply application due to the lower on-state resistance and lower capacitance. Static characteristics for these devices are evaluated using a curve tracer for different device junction temperature. A common double pulse test (DPT) platform is developed to evaluate the switching loss at different device junction temperature ranging from 25°C to 175°C. The experimental setup and results are presented for different load currents and temperature.