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Silicon carbide (SiC) MOSFET with a silicon oxide layer capable of suppressing deterioration of carrier mobility and variation in threshold voltage
Silicon carbide (SiC) MOSFET with a silicon oxide layer capable of suppressing deterioration of carrier mobility and variation in threshold voltage
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机译:具有氧化硅层的碳化硅(SiC)MOSFET,能够抑制载流子迁移率的下降和阈值电压的变化
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摘要
A semiconductor device according to an embodiment includes a silicon carbide layer, a gate electrode, and a silicon oxide layer disposed between the silicon carbide layer and the gate electrode, a number of single bonds between carbon atoms being larger than that of double bonds between carbon atoms in the silicon oxide layer.
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