In an alternative aspect, an apparatus includes a semiconductor substrate, a drift region disposed in the semiconductor substrate; A body region disposed in the drift region and a source region disposed in the body region may be included. The device may also include a gate trench disposed in the semiconductor substrate. The device may further include a gate dielectric disposed on the sidewall and bottom surface of the gate trench, the gate dielectric on the sidewall defining a first interface with the body region, and the gate dielectric on the bottom surface is the body. Define a second interface with the region. The device may further include a gate electrode disposed over the gate dielectric, and a transverse channel region disposed in the body region and defined along the second interface.
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