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Sub-threshold startup charge pump using depletion MOSFET for a low-voltage harvesting application

机译:使用耗尽型MOSFET的亚阈值启动电荷泵,适用于低压采集应用

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This paper presents a fully integrated CMOS start-up circuit for a low voltage battery-less harvesting application. The proposed topology is based on a step-up charge pump using depletion transistors instead of enhancement transistors. With this architecture, we can obtain a self-starting voltage below the enhancement transistor's threshold due to its normally-on operation. The key advantages are the CMOS compatibility, inductor-less solution and no extra post-fabrication processing. The topology has been simulated in 0.18μm technology using a transistor-level model and has been compared to the traditional charge pump structure. The depletion-based voltage doubler charge pump enables operation from an input voltage as low as 250mV compared to 400mV in an enhancement-based one. The proposed topology can also achieve other conversion ratios such as 1:-1 inverter or 1:N step-up.
机译:本文提出了一种用于低压无电池采集应用的完全集成的CMOS启动电路。提出的拓扑基于使用耗尽型晶体管而不是增强型晶体管的升压电荷泵。利用这种架构,由于其正常导通操作,我们可以获得低于增强晶体管阈值的自启动电压。关键优势在于CMOS兼容性,无电感器解决方案以及无需额外的后加工处理。该拓扑已使用晶体管级模型在0.18μm技术中进行了仿真,并已与传统的电荷泵结构进行了比较。基于耗尽的倍压电荷泵使输入电压低至250mV,而基于增强型的电荷泵则为400mV。提出的拓扑还可以实现其他转换比,例如1:-1反相器或1:N升压。

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