Two-dimensional device simulation for radio frequency performance of AlGaN/GaN HEMT

摘要

In order to obtain better high frequency performance for GaN-based devices, we investigate the influence of the gate length L, the gate-source space L, the gate-drain space L, and the thickness of barrier AlGaN on frequency performance of AlGaN/GaN high electron mobility transistors (HEMTs) using silvaco TCAD simulation. Besides, the importance of Ohmic contact resistance R to current-gain cutoff frequency f is also presented by our simulation. It presents that the f increases dramatically with the decrease of L and R while L and L affect f lightly. Meanwhile, the optimized thickness of AlGaN barrier layer is obtained in our structure.