Mechanism of I–V asymmetry of MIM capacitors based on high-k dielectric

摘要

MIM capacitors based on high-k dielectric are used in analog CMOS. They tend to show up an asymmetric I-V characteristics even though they may have an apparently symmetric structure; the same situation occurs for high-k dielectric deposited by CVD or ALD. In this paper, we will propose a physical mechanism for the asymmetric I-V characteristics observed and we will also provide experimental data to support our claim.