High-Performance MIM Capacitors Using a High-k TiZrO Dielectric

摘要

[[abstract]]We have fabricated high- Ni/TiZrO/TaN metal–insulator–metal (MIM) capacitors. A low leakage current of 3.3×10−8 A/cm2 at −1 V was obtained for a 18 fF/µm2 capacitance density. For a 5.5 fF/µm2 capacitance density device, a small voltage coefficient of capacitance of 105 ppm/V2 and temperature coefficient of capacitance of 156 ppm/°C were measured.