Impacts of fluorine-treatment on E-mode AlGaN/GaN MOS-HEMTs

摘要

The impact of fluorine treatment on AlGaN/GaN MOS-HEMTs has been investigated. Fluorine was found to suppress pre-existing traps in MOS-HEMT, which improves the off-state at high temperatures. Fluorine doping and associated etching, however, also generates slow border traps and fast interface states that degrade the MOS-HEMT performance. Multi-faceted mechanisms for drain current degradation due to F-doping and gate-recess-etch have been investigated in enhancement-mode MOS-HEMTs.