3amp;#x2013;5 GHz CMOS Power Amplifier design for ultra-wide-band application

摘要

This paper presents the design of a wideband class AB cascode Power Amplifier (PA) using UMC 0.18µm CMOS process for UWB applications covering lower band of 3–5 GHz. Designed class AB PA delivers an output power of 1.80267 dBm at an input 1-dB compression point of −11.144 dBm for a 4 GHz frequency. It achieves a good gain flatness of 13.3±1.0 dB over the entire 3–5 GHz. The matching networks are designed to achieve an input and output return loss of −7.5 and −7.0 dB respectively, with an excellent reverse isolation of −37 dB. Power Added Efficiency (PAE) is found to be 15.32% at −5 dBm input RF power. The designed PA also found to be un-conditionally stable.