RF characteristics and mobility performance of a 30nm Gate length E-mode Junctionless Nanowire transistor

摘要

Junctionless Nanowire transistors are considered in the family of next generation high performance device group because of their simplicity in fabrication and very good scalable properties they provide. In this paper we report a 30nm Gate length non planar, ultra thin JNT for high frequency, high speed applications. We analyze the high frequency Microwave performance of the proposed device by successful variation in various high frequency parameters. The mobility performance is also discussed across thechannel of the device. Lastly, the electron transport phenomenon and alsothe energy band formation in the channel are also depicted in this paper. To the knowledge of the author the device discussed in this report is first of its kind.