Correlation of BTI induced device parameter degradation and variation in scaled Metal Gate / High-k CMOS technologies

摘要

The correlation between time-zero device parameter and BTI induced parameter degradation is studied in detail. The device overdrive remains the dominant factor in the ΔIdsat for ultra-narrow logic gates while ΔVTlin shows a weak but measureable correlation to the time-zero value. The correlation has an impact on the σ-values of VTlin for stressed devices and should be considered for more accurate circuit aging simulations.