Low temperature junction formation by solid phase epitaxy on thin film devices: Atomistic modeling and experimental achievements

摘要

In this paper, we address the problem of junction formation with a low temperature processing (≤ 600°C) through Solid Phase Epitaxial Regrowth. We present the main experimental achievements and suggest solutions to optimize the junctions. In particular, atomistic simulations based on kinetic Monte Carlo (kMC) method allow getting insight into the complex physical phenomena that take place during junction formation.